Highlight November 2011

Resistivity in High-Temperature Superconductors (HTSC)

The electrical resistivity ρ is an internal material constant, which keeps constant for sizes of material down to the unit cell of the crystal. This is also valid for doped materials, but this time unit volume is defined by doping distance. Researchers at the Institute of Space Systems and international partners discovered a correlation between the unit volume of doped HTSCs and the experimentally determined resistivity ρ(exp) at ~T_c. For a single-mode HTSC with one CuO₂ plane per unit cell it results in ρ(exp) ≈ h/(2e²) • c, where c is the distance between two CuO₂ planes.

Paper: H.P. Roeser et al, AJP, 4 (2011), 109 -133

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